YANGJIE YJG25GP10A

YANGJIE · FETs & Power MOSFETs · MPN YJG25GP10A

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)236pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation28.8W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)38mΩ@10V;43mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.1nF
TypeP-Channel

Technical details

P-Channel 100V 25A 28.8W Surface Mount PDFN5060-8L

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