YANGJIE · FETs & Power MOSFETs · MPN YJG110G10B
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 110A |
| Output Capacitance(Coss) | 1.6nF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 113W |
| RDS(on) | 4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.3nF |
| Type | N-Channel |
N-Channel 100V 110A 113W Surface Mount PDFN5060-8L