YANGJIE · FETs & Power MOSFETs · MPN YJG110G04HHQ
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| Gate Charge(Qg) | 56.56nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.18nF |
| Current - Continuous Drain(Id) | 110A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 1.9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Input Capacitance(Ciss) | 4.38nF |
| Type | N-Channel |
40V 110A 4V 100W 1.9mΩ@10V N-Channel PDFN5060-8L Single FETs, MOSFETs RoHS