YANGJIE YJD80N03B

YANGJIE · FETs & Power MOSFETs · MPN YJD80N03B

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Specifications

Gate Charge(Qg)52.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)435pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)252pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.15nF
TypeN-Channel

Technical details

N-Channel 30V 80A 45W Surface Mount TO-252

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