YANGJIE · FETs & Power MOSFETs · MPN YJD65G10A
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 11.5mΩ@4.5V |
| Input Capacitance(Ciss) | 2.27nF |
| Type | N-Channel |
100V 65A 2.5V 96W 11.5mΩ@4.5V N-Channel TO-252 Single FETs, MOSFETs RoHS