YANGJIE · FETs & Power MOSFETs · MPN YJD60N02A
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| Gate Charge(Qg) | 65nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF |
| RDS(on) | 14mΩ@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.45nF |
| Type | N-Channel |
N-Channel 20V 60A 35W Surface Mount TO-252