YANGJIE · FETs & Power MOSFETs · MPN YJD50N06A
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 21.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 77.5pF |
| RDS(on) | 17mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.585nF |
| Type | N-Channel |
N-Channel 60V 50A 21.6W Surface Mount TO-252