YANGJIE · FETs & Power MOSFETs · MPN YJD25N10A
No reviews yet — be the first to review YANGJIE YJD25N10A.
| Gate Charge(Qg) | 51.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 45W |
| RDS(on) | 52mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.071nF |
| Type | N-Channel |
100V 25A 3V 45W 52mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS