YANGJIE YJD120N04A

YANGJIE · FETs & Power MOSFETs · MPN YJD120N04A

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Specifications

Gate Charge(Qg)49nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)436pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.645nF
TypeN-Channel

Technical details

N-Channel 40V 120A 110W Surface Mount TO-252

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