YANGJIE · FETs & Power MOSFETs · MPN YJB30GP10A
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 236pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 56mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.1nF |
| Type | P-Channel |
100V 30A 2.5V 125W 56mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS