YANGJIE · FETs & Power MOSFETs · MPN YJB200G06B
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 260W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 2.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.165nF |
| Type | N-Channel |
N-Channel 60V 200A 260W Surface Mount TO-263