YANGJIE UMH9N

YANGJIE · Transistors (BJTs) · MPN UMH9N

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain68
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor13kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio5.7
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))300mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@10mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-363

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