YANGJIE PBSS5350X

YANGJIE · Transistors (BJTs) · MPN PBSS5350X

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain200
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))390mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 50V 3A 100MHz 500mW Surface Mount SOT-89

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