YANGJIE PBSS5240T

YANGJIE · Transistors (BJTs) · MPN PBSS5240T

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))330mV

Technical details

Bipolar (BJT) Transistor PNP 40V 2A 100MHz 300mW Surface Mount SOT-23

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