YANGJIE MMBTA56Q

YANGJIE · Transistors (BJTs) · MPN MMBTA56Q

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain100
Emitter-Base Voltage VEBO4V
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

80V 100 1 PNP PNP 500mA SOT-23 Single Bipolar Transistors RoHS

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