YANGJIE MMBTA42Q

YANGJIE · Transistors (BJTs) · MPN MMBTA42Q

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO300V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 350mW Surface Mount SOT-23

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