YANGJIE · Transistors (BJTs) · MPN MMBT3906Q
No reviews yet — be the first to review YANGJIE MMBT3906Q.
| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 40 |
| Pd - Power Dissipation | 300mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor PNP 40V 200mA 300mW Surface Mount SOT-23