YANGJIE DTA114EE

YANGJIE · Transistors (BJTs) · MPN DTA114EE

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Specifications

Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)50mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor10kΩ
Number1 PNP Pre-Biased
typePNP
Resistor Ratio1
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 100mA 150mW Surface Mount SOT-523

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