YANGJIE DTA114ECA

YANGJIE · Transistors (BJTs) · MPN DTA114ECA

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Operating Temperature-40℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor13kΩ
typePNP
Number1 PNP Pre-Biased
Resistor Ratio1
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 200mW Surface Mount SOT-23

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