YANGJIE BSS138DW

YANGJIE · FETs & Power MOSFETs · MPN BSS138DW

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Specifications

Gate Charge(Qg)1.7nC@10V
Drain to Source Voltage50V
Output Capacitance(Coss)2.7pF
Current - Continuous Drain(Id)340mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)1.78pF
RDS(on)3Ω@4.5V
Number2 N-Channel
Input Capacitance(Ciss)28.5pF
TypeN-Channel

Technical details

N-Channel Array 50V 340mA 350mW Surface Mount SOT-363

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