YANGJIE BSS123W

YANGJIE · FETs & Power MOSFETs · MPN BSS123W

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Specifications

Gate Charge(Qg)1.61nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)5.5Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)32pF
TypeN-Channel

Technical details

N-Channel 100V 200mA 150mW Surface Mount SOT-323

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