YANGJIE BC847BSQ

YANGJIE · Transistors (BJTs) · MPN BC847BSQ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain450
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 150MHz 200mW Surface Mount SOT-363

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