YANGJIE BC817DPN

YANGJIE · Transistors (BJTs) · MPN BC817DPN

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation330mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor NPN+PNP 45V 500mA 100MHz 330mW Surface Mount SOT-23-6L

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