YANGJIE 2SC5658-R

YANGJIE · Transistors (BJTs) · MPN 2SC5658-R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain560
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation100mW
Number1 NPN
typeNPN
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 50V 0.15A 160MHz 100mW Surface Mount SOT-723

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