YANGJIE 2SA812-M5

YANGJIE · Transistors (BJTs) · MPN 2SA812-M5

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Specifications

Current - Collector Cutoff100pA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain135
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 50V 0.1A 180MHz 200mW Surface Mount SOT-23

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