YANGJIE 2N7002DW

YANGJIE · FETs & Power MOSFETs · MPN 2N7002DW

No reviews yet — be the first to review YANGJIE 2N7002DW.

Specifications

Gate Charge(Qg)1.7nC@15V
Drain to Source Voltage60V
Output Capacitance(Coss)9.5pF
Current - Continuous Drain(Id)340mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)1.2Ω@10V
Number2 N-Channel
Input Capacitance(Ciss)15pF
TypeN-Channel

Technical details

N-Channel Array 60V 340mA 350mW Surface Mount SOT-363

Related FETs & Power MOSFETs