YANGJIE · FETs & Power MOSFETs · MPN 2N7002BDW
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 1.7nC@10V |
| Current - Continuous Drain(Id) | 350mA |
| Output Capacitance(Coss) | 6pF |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 240mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 700mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 34pF |
| Type | N-Channel |
N-Channel 60V 350mA Surface Mount SOT-363