XZT S8550

XZT · Transistors (BJTs) · MPN S8550

No reviews yet — be the first to review XZT S8550.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 25V 0.5A 300mW Surface Mount SOT-23

Related Transistors (BJTs)