XNRUSEMI XRS80P10T

XNRUSEMI · FETs & Power MOSFETs · MPN XRS80P10T

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Specifications

Gate Charge(Qg)76nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)536pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
RDS(on)25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 P-Channel
Input Capacitance(Ciss)4.2nF
TypeP-Channel

Technical details

100V 80A 4V 250W 25mΩ@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs RoHS

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