XNRUSEMI XRS80N10

XNRUSEMI · FETs & Power MOSFETs · MPN XRS80N10

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Specifications

Gate Charge(Qg)39.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)865pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation97W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)13.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.046nF
TypeN-Channel

Technical details

N-Channel 100V 80A 97W Surface Mount TO252-3L

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