XNRUSEMI XRS80N06LD

XNRUSEMI · FETs & Power MOSFETs · MPN XRS80N06LD

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)30nC@30V
Output Capacitance(Coss)850pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.14nF
TypeN-Channel

Technical details

60V 80A 1.8V 78W 4.2mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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