XNRUSEMI XRS80N04D

XNRUSEMI · FETs & Power MOSFETs · MPN XRS80N04D

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)455pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.55V
Pd - Power Dissipation65.8W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.98nF
TypeN-Channel

Technical details

40V 80A 1.55V 65.8W 3.4mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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