XNRUSEMI XRS70N04D

XNRUSEMI · FETs & Power MOSFETs · MPN XRS70N04D

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Specifications

Gate Charge(Qg)18nC@20V
Drain to Source Voltage40V
Output Capacitance(Coss)265pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation35.7W
Reverse Transfer Capacitance (Crss@Vds)12.5pF
RDS(on)4.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.15nF
TypeN-Channel

Technical details

40V 70A 1.7V 35.7W 4.6mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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