XNRUSEMI XRS65N06

XNRUSEMI · FETs & Power MOSFETs · MPN XRS65N06

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Specifications

Gate Charge(Qg)21.7nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)65A
Output Capacitance(Coss)355pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation31.25W
RDS(on)7.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 N-channel
Input Capacitance(Ciss)1.21nF
TypeN-Channel

Technical details

N-Channel 60V 65A 31.25W Surface Mount TO252-3L

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