XNRUSEMI XRS65N04F

XNRUSEMI · FETs & Power MOSFETs · MPN XRS65N04F

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Specifications

Gate Charge(Qg)28nC@20V
Drain to Source Voltage40V
Current - Continuous Drain(Id)65A
Output Capacitance(Coss)187pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)178pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.048nF
TypeN-Channel

Technical details

40V 65A 1.5V 39W 5.5mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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