XNRUSEMI XRS65N04D

XNRUSEMI · FETs & Power MOSFETs · MPN XRS65N04D

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Specifications

Gate Charge(Qg)28nC@20V
Drain to Source Voltage40V
Current - Continuous Drain(Id)65A
Output Capacitance(Coss)187pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation39W
RDS(on)5.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)178pF
Number1 N-channel
Input Capacitance(Ciss)1.048nF
TypeN-Channel

Technical details

40V 65A 1.7V 39W 5.8mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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