XNRUSEMI XRS60N10

XNRUSEMI · FETs & Power MOSFETs · MPN XRS60N10

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22.7nC@10V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)144pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation67.5W
Reverse Transfer Capacitance (Crss@Vds)11.3pF
RDS(on)17mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.208nF
TypeN-Channel

Technical details

N-Channel 100V 60A 67.5W Surface Mount TO252-3L

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