XNRUSEMI XRS50N03D

XNRUSEMI · FETs & Power MOSFETs · MPN XRS50N03D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)16nC@15V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)475pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation31.25W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)905pF
TypeN-Channel

Technical details

30V 50A 1.6V 31.25W 4mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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