XNRUSEMI XRS40N10D

XNRUSEMI · FETs & Power MOSFETs · MPN XRS40N10D

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22.7nC@10V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)144pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation67.5W
Reverse Transfer Capacitance (Crss@Vds)11.3pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.208nF
TypeN-Channel

Technical details

100V 40A 1.7V 67.5W 10mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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