XNRUSEMI XRS30N10D

XNRUSEMI · FETs & Power MOSFETs · MPN XRS30N10D

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Specifications

Gate Charge(Qg)13nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)278pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation31W
RDS(on)15.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)806pF
TypeN-Channel

Technical details

100V 30A 1.5V 31W 15.6mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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