XNRUSEMI XRS200N12T

XNRUSEMI · FETs & Power MOSFETs · MPN XRS200N12T

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)146.9nC@10V
Output Capacitance(Coss)1.22nF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
RDS(on)3.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)9.56nF
TypeN-Channel

Technical details

N-Channel 120V 200A 300W Through Hole TO-220AB

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