XNRUSEMI XRS200N12H

XNRUSEMI · FETs & Power MOSFETs · MPN XRS200N12H

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)146.9nC@60V
Output Capacitance(Coss)1.22nF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.56nF
TypeN-Channel

Technical details

N-Channel 120V 200A 300W Through Hole TO-247

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