XNRUSEMI XRS200N12G

XNRUSEMI · FETs & Power MOSFETs · MPN XRS200N12G

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)146.9nC@10V
Current - Continuous Drain(Id)200A
Output Capacitance(Coss)1.22nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.56nF

Technical details

120V 200A 3V 300W 2.4mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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