XNRUSEMI XRS200N06HF

XNRUSEMI · FETs & Power MOSFETs · MPN XRS200N06HF

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Specifications

Gate Charge(Qg)103nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)200A
Output Capacitance(Coss)2.38nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)1.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.156nF
TypeN-Channel

Technical details

60V 200A 2.4V 139W 1.1mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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