XNRUSEMI XRS1P10

XNRUSEMI · FETs & Power MOSFETs · MPN XRS1P10

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Specifications

Gate Charge(Qg)4.35nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)1A
Output Capacitance(Coss)9.53pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)800mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)141pF
TypeP-Channel

Technical details

P-Channel 100V 1A 1W Surface Mount SOT-23

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