XNRUSEMI XRS160N06T

XNRUSEMI · FETs & Power MOSFETs · MPN XRS160N06T

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)74.37nC
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation113W
RDS(on)3.4mΩ
Reverse Transfer Capacitance (Crss@Vds)66pF
Number1 N-channel
Input Capacitance(Ciss)4.61nF

Technical details

N-Channel 60V 160A 113W Through Hole TO-220AB

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