XNRUSEMI XRS15N10D

XNRUSEMI · FETs & Power MOSFETs · MPN XRS15N10D

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Specifications

Gate Charge(Qg)3.7nC@50V
Drain to Source Voltage100V
Output Capacitance(Coss)58pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation46W
RDS(on)61mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.9pF
Number1 N-channel
Input Capacitance(Ciss)228pF
TypeN-Channel

Technical details

100V 15A 1.8V 46W 61mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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