XNRUSEMI XRS150P10T

XNRUSEMI · FETs & Power MOSFETs · MPN XRS150P10T

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Specifications

Gate Charge(Qg)170nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation305W
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)139pF
Number1 P-Channel
Input Capacitance(Ciss)11.687nF

Technical details

P-Channel 100V 305W Through Hole TO-220AB

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