XNRUSEMI XRS150P10H

XNRUSEMI · FETs & Power MOSFETs · MPN XRS150P10H

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Specifications

Gate Charge(Qg)170nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation305W
RDS(on)8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)139pF
Number1 P-Channel
Input Capacitance(Ciss)11.687nF
TypeP-Channel

Technical details

100V 150A 4V 305W 8mΩ@10V 1 P-Channel P-Channel TO-247 Single FETs, MOSFETs RoHS

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