XNRUSEMI XRS150P06T

XNRUSEMI · FETs & Power MOSFETs · MPN XRS150P06T

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Specifications

Gate Charge(Qg)135nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation183W
Reverse Transfer Capacitance (Crss@Vds)85.6pF
RDS(on)4.3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)9.123nF
TypeP-Channel

Technical details

P-Channel 60V 150A 183W Through Hole TO-220AB

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